2
RF Device Data
Freescale Semiconductor
MRFE6S9160HR3 MRFE6S9160HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 66 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 525
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 1200 mAdc)
VGS(Q)
?
3
?
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD
= 28 Vdc, I
D
= 1200 mAdc, Measured in Functional Test)
VGG(Q)
2.1
3.17
4.22
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 3.6 Adc)
VDS(on)
0.1
0.175
0.3
Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.2
?
pF
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
80.2
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 35 W Avg. N-CDMA, f = 880 MHz,
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21
23
dB
Drain Efficiency
ηD
29
31
?
%
Adjacent Channel Power Ratio
ACPR
?
-46.8
-45
dBc
Input Return Loss
IRL
?
-17
-9
dB
1. VGG
= 19/18 x V
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched on input.
(continued)
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